The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors（H/EMTs）.In this work,the influence of the diamond layer on the electrical characteristics of AlGaN/GaN HEMTs is investigated by simulation. The results show that the lattice temperature can be effectively decreased by utilizing the diamond layer. With increasing the drain bias, the diamond layer plays a more significant role for lattice temperature reduction. It is also observed that the diamond layer c...

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本文編號：4050495